1. 1972 L. Forbes, "APPLICATIONS OF ION IMPLANTATION TO N-CHANNEL FET DEVICES AND CIRCUITS," Presented at Westinghouse Advanced Technology Center, Baltimore, MD, July 31, 1972; and NCR Microelectronics Division, Dayton, OH, Oct. 27, 1972.

2. 1974 L. Forbes, "NON-RADIATIVE RECOMBINATION AND DEEP LEVEL DEFECTS IN GaAs1-xPx RED LIGHT EMITTING DIODES," Invited Semiconductor Seminar presented at the Dept. of Electrical Engineering and Material Res. Lab., Univ. of Illinois, Urbana, May 3, 1974; and at the IEEE Device Res. Conf., Santa Barbara, CA, June 25, 1974. (See also E4).

3. 1975 L.L. Wittmer, W.C. Parker, H. Elabd, K.W. Loh, J.R. Yeargan and L. Forbes, "THE INFRARED SENSING MOSFET," 1975 Int'l. Electron Devices Mtng., Washington, DC, Dec. 1975; Also presented at Hughes Res. Labs., Malibu, CA, Jan. 1976. (See also 26A).

4. 1976 L. Forbes, K.W. Loh and L.L. Wittmer, "CHARACTERISTICS OF THE INDIUM- AND GALLIUM-DOPED SILICON INFRARED SENSING MOSFET's (IRFET'S)," Presented at the 2nd Int'l. Conf. on Solid-State Devices, Tokyo, Japan, Sept. 1-3, 1976, extended abstract to be published in the Japanese J. of Applied Physics, March 1977. Also presented at Rockwell Int'l. Electronics Res. Div., Anaheim, CA, July 1976; and Hughes Electro-Optical Systems Div., Culver City, CA, Aug. 1976. (See also 29A and 6E).

5. 1976 B.M. Hawkins and L. Forbes, "CHARACTERISTICS OF THE COPPER IMPURITY CENTER IN GaAsP," Presented by Hawkins at the South West IEEE Conf., Austin, TX, April 14-16, 1976; and presented by Forbes at the IEEE Specialists Conf. on Electroluminescent Diodes, Nemu-no-Sate, Japan, Sept. 6-8, 1976. (See also 27A).

6. 1978 L. Forbes, "RESEARCH ON IMPERFECTION CENTERS IN SEMICONDUCTORS AT UCD," Invited seminar presented at Hewlett-Packard Integrated Circuits Lab., Palo Alto, CA, Feb. 1978.

7. 1978 L. Forbes, "CONDUCTANCE AND CAPACITANCE DLTS - THE HP-ICL SYSTEM," Invited Seminars presented at Hewlett-Packard, Santa Rosa Div., Oct. 17, 1978; and Hewlett-Packard Optoelectronics Div., Palo Alto, CA, Nov. 1978; and combined Hewlett-Packard Labs, Dec. 1978.

8. 1979 L. Forbes and C.D. Chang, "CONDUCTANCE TRANSIENTS ON GaAs MESFET's," 1979 GaAs Int. Circuits Symp., Oct. 26-27, 1979, Lake Tahoe, NV. 9. 1979 L. Forbes, "GaAs MATERIALS CHARACTERIZATION," Invited Seminar presented at Hewlett-Packard Labs., Palo Alto, CA, Dec. 17, 1979.

ORAL PRESENTATIONS - (Invited Lectures and Conference Papers (cont'd)

10. 1980 L. Forbes, J. Tillinghast and C. Li, "EVALUATION AND INTERPRETATION OF PHOTO-HALL MEASUREMENTS ON CHROMIUM DOPED SEMI-INSULATING SUBSTRATES OBTAINED USING AN AUTOMATED VAN DER PAUW MEASUREMENT SYSTEM," 1979 IEEE Workshop on Compound Semiconductor Microwave Materials and Devices, San Francisco, CA, Feb. 11-12, 1980.

11. 1980-81 L. Forbes, "CHARACTERIZATION OF SEMI-INSULATING GaAs MATERIALS AND MESFET DEVICES," Invited Seminars presented at R&D Center, Tektronix, Beaverton, OR, Nov. 14, 1980; ITT Electro-Optical Products Div., Roanoke, VA, Mar. 9, 1981; Hughes R&D Center, Torrance, CA, April 3, 1981.

12. 1982 L. Forbes, "SEMICONDUCTOR MATERIALS CHARACTERIZATION: GaAs AND SILICON," Invited Seminar at the Physics Colloquium, Sonoma State Univ., Rohert Park, CA, Feb. 22, 1982.

13. 1982- L. Forbes, C.Y. Kung and J.D. Peng, "INFRARED ABSORPTION OF OXYGEN 1983 PRECIPITATES IN CZ SILICON," 1982 Annual Mtng. of the Materials Res. Soc., Boston, MA; also presented at Intel Corp., Aloha, OR; Oregon State Univ., Corvallis, OR; Tektronix Corp., Beaverton, OR; and Hewlett-Packard, Corvallis, OR.

14. 1983 L. Forbes, C.Y. Kung and J.D. Peng, "OXYGEN PRECIPITATION, DENUDED ZONES, INTRINSIC GETTERING AND GENERATION LIFETIMES ON (100) CZ SILICON," Electrochem. Soc. Spring Mtng., San Francisco, CA, May 1983.

15. 1983 L. Forbes, "CHARACTERIZATION OF MOS GRADE SILICON," Invited seminar Oregon Chapter of Electrochemical Soc., Oregon Graduate Ctr., Beaverton, OR, Nov. 1983.

16. 1984 L. Forbes, P. Canfield, R. Gleason and A. McCamant, "SEPARATION OF GENERATION RECOMBINATION AND 1/f NOISE COMPONENTS ON GaAs FET's," Device Res. Conf., Santa Barbara, CA, June 18-20, 1984.

17. 1984 L. Forbes and J.D. Peng, "AMBIENT EFFECTS ON OXYGEN PRECIPITATION IN SILICON," Electrochemical Soc., Fall Mtng., New Orleans, LA, Oct. 1984.

18. 1984 L. Forbes, F.D. Whitwer and J.D. Peng, "OXYGEN PRECIPITATION IN CMOS WAFERS," 1984 Annual Mtng. of the Materials Res. Soc., Boston, MA, Nov. 1984.

19. 1986 L. Forbes, "BURIED CHANNEL GaAs FET's," Invited Seminar at the Naval Res. Lab., Sept. 8, 1986; and at the GaAs Reliability Workshop at the GaAs Integrated Circuits Symp., Greenlefe, FL, Oct. 27, 1986.

ORAL PRESENTATIONS - (Invited Lectures and Conference Papers) (cont'd)

20. 1987 L. Forbes, "IMPROVED HIGH FREQUENCY FIELD EFFECT TRANSISTORS 1989 AND APPLICATIONS," Invited Seminars at Univ. of British Columbia, Vancouver, Canada, Oct. 26, 1987; Univ. of Calgary, Canada, Jan. 13, 1989; Univ. of Texas at Dallas, Feb. 2, 1989; Simon Fraser Univ., Vancouver, Canada, Jan. 23, 1989; and Clemson Univ., Clemson, SC, June 6, 1989.

21. 1987 L. Forbes, "SILICON MATERIALS CHARACTERIZATION," Invited Seminar given at the Oregon Graduate Center, Beaverton, OR, Jan. 29, 1987.

22. 1988 L. Forbes, "IMPERFECTION CENTERS AND FET's," Invited Seminar at San Diego State University, May 1988.

23. 1988 L. Forbes, "SOS MATERIALS CHARACTERIZATION," Seminar at Naval Ocean Systems Center, San Diego, CA, 24 Aug. 1988.

24. 1991 L. Forbes, "THERMAL SELF-LIMITING EFFECTS IN THE LONG-TERM AC STRESS ON N-CHANNEL LDD MOSFET'S," The 9th Biennial Univ/Govt/Ind. Microelectronics Symposium, Melbourne, FL, 12-14, June 1991.

25. 1991 L. Forbes, "THERMAL RE-EMISSION OF HOT ELECTRONS IN NMOS TRANSISTORS," IEEE Device Research Conf., Boulder, CO, 17-19 June 1991.

26. 1992 L. Forbes, "RELIABILITY CONSIDERATIONS IN ANALOG AND MIXED-MODE CMOS INTEGRATED CIRCUITS," Presentation to NSF Center on the Design of Analog/Digital Integrated Circuits, Corvallis, OR, July 1992.

27. 1993 L. Forbes, "NOISE MEASUREMENTS AND ANALYSIS IN GaAs MESFET INTEGRATED CIRCUITS," Presentation to NSF Center on the Design of Analog/Digital Integrated Circuits, Univ. of Washington, Feb. 1993.

28. 1993 L. Forbes, "MATCHING AND RELIABILITY CONSIDERATIONS IN ANALOG AND MIXED-MODE CMOS CIRCUIT DESIGN," Presentation to NSF Center on the Design of Analog/Digital Integrated Circuits, Portland, OR, July 1993.

29. 1995 L. Forbes, "RESONANT FORWARD-BIASED GUARD RING DIODES FOR SUPPRESSION OF SUBSTRATE NOISE IN MIXED-MODE CMOS CIRCUITS," Presentation to NSF Center on the Design of Analog/Digital Integrated Circuits, Seattle, WA, Feb. 1995.

30. 1995 L. Forbes, "1/f NOISE CORNER FREQUENCY OF FET's ON SEMI-INSULATING SUBSTRATES," U.S. Conf. on GaAs Manufacturing Technology (MANTECH), New Orleans, 7-11 May 1995.

31. l996 L. Forbes, “1/f NOISE DUE TO TEMPERATURE FLUCTUATIONS IN HEAT CONDITION,” Device        Research Conference, Santa Barbara, June 1996.

32. 1999 L. Forbes, "LOW FREQUENCY NOISE, DEVICES AND MODELS,"
     Report to NSF Center on the Design of Analog/Digital Integrated Circuits,
     Feb 1999 Seattle WA, July 1999 Stevenson WA,

33. 2000  L. Forbes, "LOW FREQUENCY NOISE, DEVICES AND MODELS,"
     Report to NSF Center on the Design of Analog/Digital Integrated Circuits,
     Feb. 2000 Seattle WA, July 2000 Mt. Hood, OR.

33. 2000-2001  L. Forbes, "DESIGN AND SIMULATION OF LOW PHASE NOISE OSCILLATORS/
      CIRCUITS,"  invited seminars:   IBM Design Center, Encinitas, CA,  9 Nov. 2000
                                                       QUALCOMM, San Diego, CA,  25 Jan. 2001

34. 2001 L. Forbes, "DESIGN AND SIMULATION OF LOW PHASE  NOISE OSCILLATORS/CIRCUITS,"
      Report to NSF Center on the Design of Analog/Digital Integrated Circuits,
      Feb. 2001 Seattle WA, July 2000 Lincoln City, OR.

35. 2002  L. Forbes, "PHASE NOISE AND CLOCK JITTER IN MIXED MODE CIRCUITS,"
      Report to NSF Center on the Design of Analog/Digital Integrated Circuits,
      Feb. 2002 Seattle WA

36.  2002  L. Forbes, C. W. Zhang, B. L. Zhang and I. Chandra, “COMPARISON OF PHASE NOISE
       SIMULATION TECHNIQUES ON A  BJT   LC OSCILLATOR,” Proc. 2002 Midwest Symp.
       on Circuits and Systems, Tulsa OK.

37.  2002  L. Forbes, and I. Chandra, “ NEW PI-MODEL OF BIPOLAR TRANSISTOR NOISE FOR
       CIRCUIT ANALYSIS AND SIMULATION & TECHNIQUE TO REDUCE PHASE NOISE IN
       BIPOLAR OSCILLATORS,” Proc. 2002 Midwest Symp. on Circuits and Systems, Tulsa OK.

38. 2003 L. Forbes ,“1/F NOISE AND CLOCK JITTER IN DIGITAL ELECTRONIC SYSTEMS,”
       Invited seminar, Agilent Technologies, Corvallis OR, 3 Feb. 2003.

39. 2003 L. Forbes (invited oral) ,“1/F NOISE AND CLOCK JITTER IN DIGITAL ELECTRONIC
      SYSTEMS,”   1st  Int. Symp. On Fluctuations and Noise,  Santa  Fe, NM, 1-4 June 2003.

40. 2005  L. Forbes,  “SIMULATION AND ANALYSIS OF NOISE  IN SWITCHED CAPACITOR AMPLIFIER
       CIRCUITS," Workshop on Microelectronics and  Electron  Devices,  Boise, Idaho, 15 April, 2005.

41. 2005  L. Forbes,  “MOSFET  l/f  NOISE MEASUREMENT UNDER  SWITCHED BIAS CONDITIONS,"
         3rd  Int.  Symp. on Fluctuations and Noise, Austin, TX, 23-25 May, 2005.

42.  2005  L. Forbes, “ANALYSIS AND SIMULATION OF NOISE  IN CORRELATED DOUBLE SAMPLING
       IMAGER CIRCUITS," 3rd  Int.  Symp. On Fluctuations  and  Noise, Austin, TX, 23-25 May, 2005.

43. L. Forbes,  "Technique for time and frequency dependent solutions of the diffusion
        equation: application to temperature of  nanoscale  devices,"  NanoTech, Boston, 8 May 2006.

44. L.  Forbes, "SUBTHRESHOLD LEAKAGE DUE TO 1/F NOISE  AND RTS(RANDOM TELEGRAPH SIGNALS),"
      IEEE Workshop on Microelectronics and Electron Devices, Boise, 20 April 2007

45.  L. Forbes, D.A. Miller and M.Y. Louie, "Single Election Trapping in Nanoscale Transistors; RTS(Random Telegraph Signals)
        and l/f Noise,"  NanoTech, Santa Clara CA, May 2007

46.   L. Forbes, D.A. Miller, and M.E. Jacob,”Electrical Probe for Nanoscale Devices and Circuits,” paper 7042-2,
                Nanoscience and Engineering, SPIE Optics and Photonics, San Diego CA, 10 Aug. 2008, p. 153.